? semiconductor components industries, llc, 1999 february, 2000 rev. 2 1 publication order number: mcr2644/d
preferred device
reverse blocking thyristors designed for back-to-back scr output devices for solid state relays or applications requiring high surge operation. ? photo glass passivated blocking junctions for high temperature stability, center gate for uniform parameters ? 400 amperes surge capability ? blocking voltage to 600 volts ? device marking: logo, device type, e.g., mcr2644, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 125 c, sine wave 50 to 60 hz; gate open) mcr2644 mcr2646 mcr2648 v drm, v rrm 200 400 600 volts on-state rms current (t c = 80 c; 180 conduction angles) i t(rms) 40 a average on-state current (t c = 80 c; 180 conduction angles) i t(av) 25 a peak non-repetitive surge current (t c = 80 c) (1/2 cycle, sine wave 60 hz, t j = 125 c) i tsm 400 450 a forward peak gate power (pulse width 1.0 m s, t c = 80 c) p gm 20 watts forward average gate power (t = 8.3 ms, t c = 80 c) p g(av) 0.5 watt forward peak gate current (pulse width 1.0 m s, t c = 80 c) i gm 2.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. these devices are rated for use in applications subject to high surge conditions. care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. scrs 40 amperes rms 200 thru 600 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mcr2644 to220ab 500/box mcr2646 to220ab mcr2648 to220ab http://onsemi.com 500/box 500/box k g a to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode
mcr2644, mcr2646, mcr2648 http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 1.0 c/w thermal resistance, junction to ambient r q ja 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm e e e e 10 2.0 m a ma on characteristics peak forward onstate voltage (1) (i tm = 80 a) v tm e 1.4 2.0 volts gate trigger current (continuous dc) (v ak = 12 vdc, r l = 100 ohms, t c = 40 c) i gt e e 15 30 50 90 ma gate trigger voltage (continuous dc) (v ak = 12 vdc, r l = 100 ohms) v gt e 1.0 1.5 volts gate non-trigger voltage (v ak = 12 vdc, r l = 100 ohms, t j = 125 c) v gd 0.2 e e volts holding current (v ak = 12 vdc, initiating current = 200 ma, gate open) i h e 30 60 ma turn-on time (i tm = 40 a, i gt = 60 madc) t gt e 1.5 e m s dynamic characteristics critical rate-of-rise of off-state voltage (gate open, v d = rated v drm , exponential waveform) dv/dt e 50 e v/ m s (1) pulse test: pulse width 300 m s, duty cycle 2%.
mcr2644, mcr2646, mcr2648 http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) i t(av) , average on-state forward current (amps) 75 85 95 105 115 dc a 90 60 5.0 a = 30 10 0 125 15 20 25 a = conduction angle 10 0 i t(av) , on-state forward current (amps) 180 0 15 20 25 30 35 40 45 a 5.0 a = conductive angle 20 25 10 15 50 5.0 a = 30 60 90 180 dc p , average power (watts) (av) t , m a x i mum c a se t emper at ure ( c ) c figure 1. average current derating figure 2. maximum onstate power dissipation
mcr2644, mcr2646, mcr2648 http://onsemi.com 4 1 k 10 k 5 k 500 20 300 2 k 3 k 200 5.0 3.0 2.0 1.0 30 10 50 100 0.5 0.3 0.02 0.01 0.03 0.05 0.07 0.2 0.1 10 20 30 50 70 0.7 0.3 0.5 140 120 100 80 60 40 0.2 40 20 0 20 2.0 1.8 1.6 0.5 0.6 0.7 0.8 1.0 0.9 1.1 0.2 0.4 0.6 0.8 20 140 120 40 1.0 1.2 100 80 20 060 40 20 5.0 10 1.4 60 7.0 100 80 4.0 140 40 60 40 120 20 0 40 20 0.1 t, time (ms) 1.0 z q jc(t) = r q jc ? r(t) t j , junction temperature ( c) off-state voltage = 12 v 7.0 60 0 1.0 10 100 v f , instantaneous voltage (volts) t j = 25 c 0.4 off-state voltage = 12 v t j , junction temperature ( c) off-state voltage = 12 v t j , junction temperature ( c) 60 i , gate trigger current (ma) gt v , gate trigger voltage (volts) gt i , holding current (ma) h i , instantaneous forward current (amps) f r(t), transient thermal resistance (normalized) figure 3. typical gate trigger current figure 4. typical gate trigger voltage figure 5. typical holding current figure 6. typical forward voltage figure 7. thermal response
mcr2644, mcr2646, mcr2648 http://onsemi.com 5 package dimensions to220ab case 221a07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c style 3: pin 1. cathode 2. anode 3. gate 4. anode
mcr2644, mcr2646, mcr2648 http://onsemi.com 6 notes
mcr2644, mcr2646, mcr2648 http://onsemi.com 7 notes
mcr2644, mcr2646, mcr2648 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mcr2644/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
|
